Crystalline CdSe thin film has been deposited using appropriate precursor solution containing Cadmium acetate, ethylenediamine, and sodium selenosulfate. The effect of parameters such as bath composition, deposition temperature, pH of the solution, and the specificity of complexing agent on growth process is studied [1, 2]. The ‘asdeposited’ CdSe thin film was found to be red in color, specularly reflective and well adherent to the glass substrate. The crystalline phase of the deposited sample was hexagonal wurtzite-type. The analysis of optical absorption data shows energy band gap energy (Eg) 2.6 eV. The morphological study and compositional analysis of film sample have been discussed. CdSe thin films have been deposited onto glass substrates by CBD technique. For deposition of CdSe thin films, 8ml of 1M Cd(CH3COO)2, and 2ml of 0.2M ethylenediamine solution were mixed in beaker. Then 50 ml of freshly prepared Na2SeSo3 solution was added slowly with constant stirring and finally 40 ml diluted deionized water was added to the beaker. The reactive solution was kept in an ice-bath at a temperature 278 K. The soda lime glass substrates were mounted vertically on a specially designed substrate holder and rotated in the reaction mixture with a speed of 5072 rpm. The temperature of the bath was then allowed to increase slowly up to 293 K. After 3 h, the glass substrates washed with distilled water, and dried naturally. The resultant film was found to be homogeneous, well adherent to the substrate, and specularly reflecting with dark red in color. The CdSe thin films were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM),energy dispersive X-ray analysis (EDAX) techniques and UV–Vis spectrophotometer. The low-temperature synthesis of CdSe semiconductor thin films has been made feasible using a simple chemical growth process. The preparation parameters such as deposition temperature, pH of the solution, composition of bath, nature of complexing agent, etc. were optimized to obtain good-quality material. Analysis of crystallographic data show that CdSe deposited in hexagonal phase, having a optical band gap 2.6 eV for ‘as-deposited’ sample.
